MagicWolfiThe switching FET in this circuit has to carry up to 5A, which is significant. Thus the drain source resistance Rds-on is important to be minimized and power dissipation through the package needs to be calculated. Here are some test results, in the form of voltage drop over the dual DS junctions.
| U load [V] | I load [A] | V drain-source x2 [mV] | Tjunction [degC] | P diss [mW] | Rdson [mOhm] |
| 5.07 | 1.27 | 56.5 | 29.5 | 72 | 22 |
| 9.03 | 2.26 | 61.6 | 33.7 | 139 | 14 |
| 11.98 | 3.00 | 89.5 | 41.8 | 268 | 15 |
| 14.62 | 3.66 | 106.5 | 49.3 | 389 | 15 |
| 19.67 | 4.92 | 141.0 | 68.3 | 693 | 14 |
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