Part number: RA30H1317M


Introduction: The RA30H1317M is among the SiRF(Silicon Radio Frequency) device family for power amplification, by design it is an Enhancement-Mode MOSFET Transistors produced by Mitsubishi electric, the electronic module has an  output power greater than 30-watt suitable for high power dissipation. The module works best as a non-linear FM modulation Module with a Broadband Frequency Range of 135-175-MHz range. 

Some Core parameters:

  • Mode of operation = Enhancement- Mode MOSFET Transistors (IDD  0, VDD = 12.5V , VGG = 0V)
  • Broadband Frequency Range: 135-175MHz
  • Output Power: 30W ηT > 40% @ VDD = 12.5V , VGG = 5V , Pin = 50mW
  • Electronic Module Size: 66 x 21 x 9.88 mm

The RA30H1317M is a five-pin electronic module namely: RF Input Pin, Gate Voltage (VGG) pin, Power Control pin, Drain Voltage (VDD) pin, RF Output pin (Pout), RF Ground (Case) pin

Application:

The RA30H1317M MOSFET is an important element in all embedded system design which is mostly used for radio communication network, power output control and fast on/off switching as per the designer requirement. Many electronic projects are developed using the RA30H1317M MOSFET such as Marine Radio, Telematics AMPS/GSM, Professional Mobile Radio (walkie talkie), and light intensity control. The RA30H1317M MOSFET is also a high voltage electronic device which offers significant features to circuit designers such as Voltage Regulator, and Switch Mode Power Supply (SMPS)