It is an insulated Gate Bipolar Transistor (IGBT). It can be regarded as something of a cross between a conventional Bipolar Junction Transistor (BJT) and a Field Effect Transistor (MOSFET), which makes it ideal for semiconductor switching. They used mainly used in power electronics.



  • Voltage Rating above 1kV
  • Current Rating above 500A
  • Input Voltage of 4 – 8 V VGE
  • Very High Input Impedance
  • Very low Output Impedance
  • Medium Switching Speed



The main advantages of using the IGBT over other types of transistor devices are its high voltage capability, low ON- resistance, ease of drive, medium switching speed and combined with zero gate drive current makes it a good choice for :-

  • Moderate speed, high voltage applications such as in pulse-width modulated (PWM)
  • Variable Speed control in Motors
  • Switch mode power supplies or solar powered DC-AC inverter.
  • Frequency converter applications operating in the hundreds of kilohertz range



Video on Youtube: