Introduction: 

It is an insulated Gate Bipolar Transistor (IGBT). It can be regarded as something of a cross between a conventional Bipolar Junction Transistor (BJT) and a Field Effect Transistor (MOSFET), which makes it ideal for semiconductor switching. They used mainly used in power electronics.

Features: 

• Voltage Rating above 1kV
• Current Rating above 500A
• Input Voltage of 4 – 8 V VGE
• Very High Input Impedance
• Very low Output Impedance
• Medium Switching Speed

Application 

The main advantages of using the IGBT over other types of transistor devices are its high voltage capability, low ON- resistance, ease of drive, medium switching speed and combined with zero gate drive current makes it a good choice for :-

• Moderate speed, high voltage applications such as in pulse-width modulated (PWM)
• Variable Speed control in Motors
• Switch mode power supplies or solar powered DC-AC inverter.
• Frequency converter applications operating in the hundreds of kilohertz range

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