Insulated Gate Bipolar transistor, like any other transistor it can be used for switching or amplification of electrical signals. They usually have three terminals called Gate, Collector and Emitter. In trench Gate IGBTs Gate is buried in the trench of silicon and hence a vertical gate channel is produced.
IRG7IC28U is a PDP trench IGBT specially designed for plasma display panels. The device utilizes advanced trench technology, ability to handle high temperature and repetitive peak current capability makes this device suitable for professional detailed product applications.
Features of IRG7IC28U
- Advanced trench IGBT technology
- Optimized for sustain and energy recovery circuit in PDP applications
- Low VCE(on) and energy per pulse
- High repetitive peak current capability
- Lead free package
AUIRGB4062D1 / AUIRGS4062D1
Pictorial view of the device is given below; it is a three terminal IC available in TO-220AB package
Pin diagram of the device is given below
IC Electrical Characteristics/ Specifications
Some Electrical characteristic of the device are given below
Gate to emitter voltage
± 30 V
IC at 25 C
Continuous collector current
IRP at 25 C
Repetitive peak current
PD at 25 C
-40 to 150 C
-40 to 150 C
Collector-to-Emitter Breakdown Voltage
Turn on delay
Turn off delay time
IRG7IC28U is a N channel trench IGBT, IGBTs requires very low voltage to maintain conduction in the circuit. Unlike bipolar junction transistors IGBTs is a unidirectional device which means it can only switch on in forward direction. Trench Gate IGBTs have a vertical Gate, that is buried in the silicon layer. Performance of the trench gate IGBT is better than ordinary IGBT. Trench Gate IGBTs offer better high frequency characteristics, smooth operation and low forward voltage drops.
UTSOURCE IRG7IC28U can be utilized in following applications
- Plasma display panels
- PDP applications
Inverter (12 V-DC to 120 V-AC)
Inverter circuit using trench Gate IGBT is shown in circuit diagram, Gates of the IGBTs are driven via controller to have the alternating current at the output. IRG7IC28U can handle a maximum continuous current of 25 A and repetitive pulsed current of 225 A, any load applied to the circuit must be within the maximum ratings of the device.
Photographic Strobe Light Control
Photographic strobe light control using IGBT is shown in figure below, when the IGBT is turned ON, the trigger transformer produces a high potential pulse which is applied to the tube. A surge current is passed between the electrodes of the tube and light is produced.